Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Author:

Zheng Zhenyi,Zhang Yue,Lopez-Dominguez VictorORCID,Sánchez-Tejerina LuisORCID,Shi Jiacheng,Feng Xueqiang,Chen Lei,Wang Zilu,Zhang Zhizhong,Zhang Kun,Hong Bin,Xu Yong,Zhang Youguang,Carpentieri MarioORCID,Fert AlbertORCID,Finocchio GiovanniORCID,Zhao WeishengORCID,Khalili Amiri PedramORCID

Abstract

AbstractCurrent-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we report bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii–Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching processes. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design.

Funder

China Scholarship Council

National Natural Science Foundation of China

European Cooperation in Science and Technology

International Mobility Project (Grant No. B16001) National Key Technology Program of China

National Science Foundation

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

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