Abstract
AbstractThe control of "flying” (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contactless gates that move together with the spins. The concept is realized using electron spins trapped and transported by moving potential dots defined by a surface acoustic wave (SAW). The SAW strain at the electron trapping site, which is set by the SAW amplitude, acts as a contactless, tunable gate that controls the precession frequency of the flying spins via the spin-orbit interaction. We show that the degree of precession control in moving dots exceeds previously reported results for unconstrained transport by an order of magnitude and is well accounted for by a theoretical model for the strain contribution to the spin-orbit interaction. This flying spin gate permits the realization of an acoustically driven optical polarization modulator based on electron spin transport, a key element for on-chip spin information processing with a photonic interface.
Funder
EC | Horizon 2020 Framework Programme
Gouvernement du Canada | Natural Sciences and Engineering Research Council of Canada
Alexander von Humboldt-Stiftung
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry,Multidisciplinary
Reference47 articles.
1. Datta, S. & Das, B. Electronic analog of the electro-optic modulator. Appl. Phys. Lett. 56, 665 (1990).
2. Bychkov, Y. A. & Rashba, E. I. Oscillatory effects and the magnetic susceptibility of carriers in inversion layers. J. Phys. C 17, 6039 (1984).
3. Koo, H. C. et al. Control of spin precession in a spin-injected field effect transistor. Science 325, 1515 (2009).
4. Chuang, P. et al. All-electric all-semiconductor spin field-effect transistors. Nat. Nanotechnol. 10, 35 (2015).
5. D’yakonov, M. I. & Perel’, V. I. Spin orientation of electrons associated with the interband absorption of light in semiconductors. SPJETP 33, 1053 (1971).
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献