Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Reference24 articles.
1. Burr, G. W. et al. Access devices for 3D crosspoint memory. J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 32, 040802 (2014).
2. Sharma, A. A., Li, Y., Skowronski, M., Bain, J. A. & Weldon, J. A. High-frequency TaOx-based compact oscillators. IEEE Trans. Electron Devices 62, 3857–3862 (2015).
3. Ridley, B. K. Specific negative resistance in solids. Proc. Phys. Soc. 82, 954–966 (1963).
4. Slesazeck, S. et al. Physical model of threshold switching in NbO2 based memristors. RSC Adv. 5, 102318–102322 (2015).
5. Funck, C. et al. Multidimensional simulation of threshold switching in NbO2 based on an electric field triggered thermal runaway model. Adv. Electron. Mater. 2, 1–13 (2016).
Cited by
58 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献