Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model-Reference-Cited by-同舟云学术

Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model

Published:2016-06-09 Issue:7 Volume:2 Page:1600169
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Funck Carsten¹,Menzel Stephan²,Aslam Nabeel²,Zhang Hehe²,Hardtdegen Alexander²,Waser Rainer¹,Hoffmann-Eifert Susanne²

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik II and Jülich-Aachen Research Alliance on Fundamentals of Information Technology (JARA-FIT); RWTH Aachen University; 52056 Aachen Germany

2. Peter Grünberg Institut (PGI 7) and Jülich-Aachen Research Alliance on Fundamentals of Information Technology (JARA-FIT); Forschungszentrum Jülich GmbH; 52425 Jülich Germany

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference50 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES

3. Complementary resistive switches for passive nanocrossbar memories

4. Access devices for 3D crosspoint memory

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