Affiliation:
1. Institute of Materials in Electrical Engineering and Information Technology II RWTH Aachen University 52074 Aachen Germany
2. Western Digital San Jose Research Center 5601 Great Oaks Parkway San Jose CA 95119 USA
3. Peter Grünberg Institute PGI 7 Research Center Jülich 52428 Jülich Germany
Abstract
Devices made of amorphous thin films of the prototypical Mott‐insulator chromium‐doped V2O3 show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused by the formation of a crystalline filament, in which a thermal runaway effect can occur. A compact model is developed that can describe the switching behavior as well as its inherent variability. The influence of the doping concentration and oxygen stoichiometry on the switching behavior is characterized and by fitting the model to the experimental data, the underlying physical changes are extracted.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials