Abstract
AbstractIn-memory computing using resistive memory devices is a promising non-von Neumann approach for making energy-efficient deep learning inference hardware. However, due to device variability and noise, the network needs to be trained in a specific way so that transferring the digitally trained weights to the analog resistive memory devices will not result in significant loss of accuracy. Here, we introduce a methodology to train ResNet-type convolutional neural networks that results in no appreciable accuracy loss when transferring weights to phase-change memory (PCM) devices. We also propose a compensation technique that exploits the batch normalization parameters to improve the accuracy retention over time. We achieve a classification accuracy of 93.7% on CIFAR-10 and a top-1 accuracy of 71.6% on ImageNet benchmarks after mapping the trained weights to PCM. Our hardware results on CIFAR-10 with ResNet-32 demonstrate an accuracy above 93.5% retained over a one-day period, where each of the 361,722 synaptic weights is programmed on just two PCM devices organized in a differential configuration.
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry
Reference60 articles.
1. Jouppi, N. P. et al. In-datacenter performance analysis of a tensor processing unit. In 2017 ACM/IEEE 44th Annual International Symposium on Computer Architecture (ISCA) 1–12 (IEEE, 2017).
2. Jia, Z., Maggioni, M., Smith, J. & Scarpazza, D. P. NVidia turing T4 GPU via microbenchmarking. Preprint at https://arxiv.org/abs/1903.07486 (2019).
3. Shafiee, A. et al. ISAAC: A convolutional neural network accelerator with in-situ analog arithmetic in crossbars. In 2016 ACM/IEEE 43rd Annual International Symposium on Computer Architecture (ISCA) 14–26 (IEEE, 2016).
4. Sebastian, A., Le Gallo, M., Khaddam-Aljameh, R. & Eleftheriou, E. Memory devices and applications for in-memory computing. Nat. Nanotechnol. https://doi.org/10.1038/s41565-020-0655-z (2020).
5. Wang, Z. et al. Resistive switching materials for information processing. Nat. Rev. Mater. 5, 173–195 (2020).
Cited by
299 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献