Influence of surface defect density on the ultrafast hot carrier relaxation and transport in $${\hbox {Cu}}_2 {\hbox {O}}$$ photoelectrodes

Abstract

AbstractCuprous oxide ($${\hbox {Cu}}_2 {\hbox {O}}$$Cu2O) is a promising material for photoelectrochemical energy conversion due to its small direct band gap, high absorbance, and its Earth-abundant constituents. High conversion efficiencies require transport of photoexcited charges to the interface without energy loss. We studied the electron dynamics in $${\hbox {Cu}}_2 {\hbox {O}}$$Cu2O(111) by time-resolved two-photon photoemission for different surface defect densities in order to elucidate the influence on charge carrier transport. On the pristine bulk terminated surface, the principal conduction bands could be resolved, and ultrafast, elastic transport of electrons to the surface was observed. On a reconstructed surface the carrier transport is strongly suppressed and defect states dominate the spectra. Evidence for surface oxygen vacancies acting as efficient carrier traps is provided, what is important for further engineering of $${\hbox {Cu}}_2 {\hbox {O}}$$Cu2O based photoelectrodes.