Prediction of Site Preference of Implanted Transition Metal Dopants in Rock-salt Oxides
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-49011-5.pdf
Reference95 articles.
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3. Perez, A. Ion implantation effects in crystalline inorganic insulators. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1, 621–627 (1984).
4. Kucheyev, S. O. et al. Ion-beam-produced structural defects in ZnO. Phys. Rev. B 67, 094115 (2003).
5. Ruffell, S., Mitchell, I. V. & Simpson, P. J. Annealing behavior of low-energy ion-implanted phosphorus in silicon. Journal of Applied Physics 97, 123518 (2005).
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