Funder
Science and Technology Project of Shenzhen
This work was financially supported by the discipline layout project of basic research program of Shenzhen
Publisher
Springer Science and Business Media LLC
Reference41 articles.
1. Neudeck, P. G., Okojie, R. S. & Chen, L. Y. High-temperature electronics - a role for wide bandgap semiconductors? Proc. IEEE 90, 1065–1076 (2002).
2. Östling, M., Ghandi, R. & Zetterling, C. M. SiC power devices — Present status, applications and future perspective. IEEE International Symposium on Power Semiconductor Devices and ICs, 47, 10–15 (2011).
3. Hudgins, J. L., Simin, G. S., Santi, E. & Khan, M. A. An assessment of wide bandgap semiconductors for power devices. IEEE Trans. Power Electron. 18, 907–914 (2003).
4. Rabkowski, J., Peftitsis, D. & Nee, H. P. Silicon carbide power transistors: a new era in power electronics is initiated. IEEE Ind. Electron. Mag. 6, 17–26 (2012).
5. Hornberger, J. et al. Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments. IEEE Aerospace Conference Proceedings, 2538–2555 (2004).
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