Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor-Reference-Cited by-同舟云学术

Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor

Published:2018-05-08 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kanaki Toshiki,Yamasaki Hiroki,Koyama Tomohiro,Chiba Daichi^ORCID,Ohya Shinobu,Tanaka Masaaki

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-24958-z.pdf

Reference28 articles.

1. Matsuno, T., Sugahara, S. & Tanaka, M. Novel Reconfigurable Logic Gates Using Spin Metal–Oxide–Semiconductor Field-Effect Transistors. Jpn. J. Appl. Phys. 43, 6032–6037 (2004).

2. Sugahara, S. & Nitta, J. Spin-Transistor Electronics: An Overview and Outlook. Proc. IEEE 98, 2124–2154 (2010).

3. Sugahara, S. & Tanaka, M. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84, 2307–2309 (2004).

4. Tanaka, M. & Sugahara, S. MOS-Based Spin Devices for Reconfigurable Logic. IEEE Trans. Electron Devices 54, 961–976 (2007).

5. Lin, X. et al. Gate-Driven Pure Spin Current in Graphene. Phys. Rev. Appl. 8, 34006 (2017).

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