Effects of energetic ion irradiation on WSe2/SiC heterostructures
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-04042-8.pdf
Reference57 articles.
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3. Huang, J.-K. et al. Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS nano 8, 923–930, doi: 10.1021/nn405719x (2013).
4. Podzorov, V., Gershenson, M., Kloc, C., Zeis, R. & Bucher, E. High-mobility field-effect transistors based on transition metal dichalcogenides. Appl. Phys. Lett. 84, 3301–3303, doi: 10.1063/1.1723695 (2004).
5. Fang, H. et al. High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788–3792, doi: 10.1021/nl301702r (2012).
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