Stable and scalable 1T MoS2 with low temperature-coefficient of resistance
Author:
Funder
DST | Science and Engineering Research Board (SERB)
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-30867-y.pdf
Reference53 articles.
1. Yu, L. et al. Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics. Nano Lett. 14, 3055–3063 (2014).
2. Roy, T. et al. Field-Effect Transistors Built from All Two-Dimensional Material Components. ACS Nano 8, 6259–6264 (2014).
3. Lee, G.-H. et al. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. ACS Nano 9, 7019–7026 (2015).
4. Wang, L. et al. One-Dimensional Electrical Contact to a Two-Dimensional Material. Science 342, 614–617 (2013).
5. Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nature Nanotechnology 10, 534–540 (2015).
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