Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-16292-7.pdf
Reference58 articles.
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3. Hanyu, T. et al. Magnetic back-end technology. In Bernard, D., Ronald, B. G. & Kyung-Jin, L. (eds) Introduction to Magnetic Random-Access Memory, 165–198 (John Wiley & Sons, Inc., 2017).
4. Ohno, H., Endoh, T., Hanyu, T., Ando, Y. & Ikeda, S. Spin-transfer-torque magnetoresistive random access memory (stt-mram) technology. In Yoshio, N. (ed.) Advances in non-volatile memory and storage technology, 455–494 (Elsevier, 2014).
5. Choi, C.-M. et al. Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin mgo dielectric film. Semicond. Sci. Technol 31, 075004 (2016).
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