Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-26997-y.pdf
Reference44 articles.
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4. Deleruyelle, D. et al. Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate. Solid State Electronics 79, 159–165 (2013).
5. Liu, Y. et al. Resistive switching memory based on organic/inorganic hybrid perovskite materials. Vacuum 130, 109–112 (2016).
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