Resistive switching memory based on organic/inorganic hybrid perovskite materials-Reference-Cited by-同舟云学术

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Resistive switching memory based on organic/inorganic hybrid perovskite materials

Published:2016-08 Issue: Volume:130 Page:109-112
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Liu Yang,Li Fushan,Chen Zhixin,Guo Tailiang,Wu Chaoxing,Kim Tae Whan

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference35 articles.

1. Resistance switching memory in perovskite oxides;Yan;Ann. Phys.,2015

2. Nonvolatile memory elements based on organic materials;Scott;Adv. Mater.,2007

3. Memristive switching mechanism for metal/oxide/metal nanodevices;Yang;Nat. Nanotechnol.,2008

4. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application;Yang;Nano Lett.,2009

5. Polyaniline nanofiber/gold nanoparticle nonvolatile memory;Tseng;Nano Lett.,2005

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