Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films-Reference-Cited by-同舟云学术

Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films

Published:2017-07-25 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Ionescu Robert,Campbell Brennan,Wu Ryan,Aytan Ece,Patalano Andrew,Ruiz Isaac,Howell Stephen W.,McDonald Anthony E.,Beechem Thomas E.,Mkhoyan K. Andre,Ozkan Mihrimah,Ozkan Cengiz S.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-06699-7.pdf

Reference36 articles.

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3. Wang, Q. H. et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnology 7, 699–712, doi: 10.1038/nnano.2012.193 (2012).

4. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotechnology 6, 147–150, doi: 10.1038/nnano.2010.279 (2011).

5. Najmaei, S. at al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nature Materials 12, 754–759, doi: 10.1038/nmat3673 (2013).

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