Direct Auger recombination and density-dependent hole diffusion in InN
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-22832-6.pdf
Reference30 articles.
1. Wu, J. et al. Effects of the narrow band gap on the properties of InN. Phys. Rev. B 66, 201403 (2002).
2. Lu, H. et al. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy. Appl. Phys. Lett. 83, 1136–1138 (2003).
3. Ruffenach, S., Moret, M., Briot, O. & Gil, B. Recent advances in the MOVPE growth of indium nitride. Phys. Status Solidi 207, 9–18 (2010).
4. Barick, B. K., Prasad, N., Saroj, R. K. & Dhar, S. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique. J. Vac. Sci. Technol. A 34, 51503 (2016).
5. Bashir, U., Hassan, Z., Ahmed, N. M., Oglat, A. & Yusof, A. S. Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer. Mater. Sci. Semicond. Process. 71, 166–173 (2017).
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