MoB2 Driven Metallic Behavior and Interfacial Charge Transport Mechanism in MoS2/MoB2 Heterostructure: A First-Principles Study
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-32850-z.pdf
Reference63 articles.
1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS 2 transistors. Nature Nanotechnol. 6, 147–150 (2011).
2. Kim, S. et al. High-mobility and low-power thin-film transistors based on multilayer MoS 2 crystals. Nature Commun. 3, 1011, https://doi.org/10.1038/ncomms2018 (2012).
3. Lembke, D. & Kis, A. Breakdown of High-Performance Monolayer MoS 2 Transistors. ACS Nano 6, 10070–10075 (2012).
4. Sangwan, V. K. et al. Low-frequency electronic noise in single-layer MoS 2 transistors. Nano Lett. 13, 4351–4355 (2013).
5. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nature Nanotechnol. 7, 699–712 (2012).
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