Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors
Author:
Affiliation:
1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl402150r
Reference56 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Emerging Photoluminescence in Monolayer MoS2
4. Control of valley polarization in monolayer MoS2 by optical helicity
5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
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