Latent Order in High-Angle Grain Boundary of GaN
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-22603-3.pdf
Reference48 articles.
1. Nakamura, S. et al. InGaN-based multi-quantum-well-structure laser diodes. Jpn. J. Appl. Physics, Part 2: Lett. 35, L74–L76 (1996).
2. Nakamura, S. The roles of structural imperfections in InGaN-based blue light- emitting diodes and laser diodes. Sci. 281, 956–961 (1998).
3. Asif Khan, M., Bhattarai, A., Kuznia, J. N. & Olson, D. T. High electron mobility transistor based on a GaN/AlxGa1-xN heterojunction. Appl. Phys. Lett. 63, 1214–1215 (1993).
4. Bour, D. P. et al. Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates. Appl. Phys. Lett. 76, 2182–2184 (2000).
5. Choi, J. H. et al. Nearly single-crystalline gan light-emitting diodes on amorphous glass substrates. Nat. Photonics 5, 763–769 (2011).
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