Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin-Reference-Cited by-同舟云学术

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Understanding luminescence properties of grain boundaries in GaN thin films and their atomistic origin

Published:2018-03-26 Issue:13 Volume:112 Page:131901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoo Hyobin¹,Yoon Sangmoon¹,Chung Kunook²,Kang Seoung-Hun³,Kwon Young-Kyun³,Yi Gyu-Chul²,Kim Miyoung¹

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea

2. Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea

3. Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 02447, Korea

Funder

POSCO TJ Park Science Fellowship

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5018598

Reference40 articles.

1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

2. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

3. Spatially resolved cathodoluminescence spectra of InGaN quantum wells

4. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

5. High-quality GaN films grown on chemical vapor-deposited graphene films

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1. Decoding Material Structures with Scanning Electron Diffraction Techniques;Crystals;2024-03-14

2. Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer;Science Advances;2021-07-30

3. Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces;Journal of Applied Physics;2021-07-21

4. Mechanical and tribological properties of Hf1-xMoxNy thin films as a function of Mo contents;Surface and Coatings Technology;2019-10

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