Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-41497-3.pdf
Reference55 articles.
1. Simoen, E. et al. Random telegraph noise: The key to single defect studies in nano-devices. Thin Solid Films 613, 2–5 (2016).
2. Frascaroli, J., Volpe, F. G., Brivio, S. & Spiga, S. Effect of Al doping on the retention behavior of HfO2 resistive switching memories. Microelectronic Engineering 147, 104–107 (2015).
3. Brivio, S., Frascaroli, J. & Spiga, S. Role of Al doping in the filament disruption in HfO2 resistance switches. Nanotechnology 28, 395202 (2017).
4. Puglisi, F. M., Pavan, P. & Larcher, L. Random telegraph noise in HfOx Resistive Random Access Memory: From physics to compact modeling. In 2016 IEEE International Reliability Physics Symposium (IRPS) MY-8-1-MY-8-5, https://doi.org/10.1109/IRPS.2016.7574624 (2016).
5. Ambrogio, S., Balatti, S., McCaffrey, V., Wang, D. & Ielmini, D. Impact of low-frequency noise on read distributions of resistive switching memory (RRAM). In Electron Devices Meeting (IEDM), 2014 IEEE International 14.4.1-14.4.4, https://doi.org/10.1109/IEDM.2014.7047051 (2014).
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