Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047051.pdf?arnumber=7047051
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Difficulties and approaches in enabling learning-in-memory using crossbar arrays of memristors;Neuromorphic Computing and Engineering;2024-08-01
2. A High-Speed True Random Number Generator Based on Unified Selector-RRAM;IEEE Electron Device Letters;2023-12
3. Statistical Modeling of Metal-Oxide RRAM SET/RESET Behavior Using Deep Neural Networks;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
4. Hybrid CMOS-RRAM True Random Number Generator Exploiting Coupled Entropy Sources;IEEE Transactions on Electron Devices;2023-03
5. Enabling High-Quality Uncertainty Quantification in a PIM Designed for Bayesian Neural Network;2022 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2022-04
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