Author:
Sugimoto Kozo,Matsuo Shigeki,Naoi Yoshiki
Abstract
AbstractUsing focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$
1.064
μ
m
wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$
300
μ
m
-thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.
Funder
Japan Society for the Promotion of Science
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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