Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-16585-x.pdf
Reference35 articles.
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2. Kumomi, H., Nomura, K., Kamiya, T. & Hosono, H. Amorphous oxide channel TFTs. Thin Solid Films 516, 1516–1522 (2008).
3. Hong, S., Park, J. W., Kim, H. J., Kim, Y. & Kim, H. J. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors. J. Inf. Disp. 17, 93–101 (2016).
4. Choi, Y. et al. Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors. Appl. Phys. Lett. 97, 162102 (2010).
5. Xu, X., Feng, L., He, S., Jin, Y. & Guo, X. Solution-processed zinc oxide thin-film transistors with a low-temperature polymer passivation layer. IEEE Electron Device Lett. 33, 1420–1422 (2012).
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