Symmetry-broken square silicon patches for ultra-narrowband light absorption

Abstract

AbstractThe effect of ultra-narrowband light absorption enhancement is presented by using metamaterials with symmetry-broken square silicon patches (SSPs). The symmetry of the SSP can be broken by introducing a narrow slit deviating from its center. By breaking the symmetry of the SSPs, slit resonance mode with standing wave patterns can be excited, and the locations of the absorption peaks can be well estimated by using the Fabry-Pérot (F-P) cavity model. Although there is no excitation of surface plasmon resonance, ultra-narrowband light absorption can be achieved by minimizing the reflectance through perfect impedance matching and simultaneously eliminating the transmittance by the metallic substrate. Good ultra-narrowband absorption features can be maintained as the parameters of the buffer layer and the SSPs are altered. When this type of symmetry-broken SSPs-based metamaterial is used in refractive-index sensors, it shows excellent sensing properties due to its stable ultra-narrowband absorption enhancement.