Local surface plasmon enhanced polarization and internal quantum efficiency of deep ultraviolet emissions from AlGaN-based quantum wells
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-02590-7.pdf
Reference16 articles.
1. He, C. et al. Free and bound excitonic effects in Al0.5Ga0.5 N/Al0.35Ga0.65 N MQWs with different Si-doping levels in the well layers. Sci Rep. 5 (2015).
2. Shatalov, M. et al. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%. Appl. Phys. Express 5(8), 082101–3 (2012).
3. Hirayama, H. et al. 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Appl. Phys. Lett. 91(7), 071901–3 (2007).
4. Deguchi, T. et al. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well. Structure. Jpn. J. Appl. Phys. 38(8B), L914–L916 (1999).
5. Reich, C. et al. Excitonic recombination in epitaxial lateral overgrown AlN on sapphire. Appl. Phys. Lett. 103(21), 212108–212111 (2013).
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