Excitonic recombination in epitaxial lateral overgrown AlN on sapphire-Reference-Cited by-同舟云学术

Excitonic recombination in epitaxial lateral overgrown AlN on sapphire

Published:2013-11-18 Issue:21 Volume:103 Page:212108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Reich Christoph,Feneberg Martin,Kueller Viola,Knauer Arne,Wernicke Tim,Schlegel Jessica,Frentrup Martin,Goldhahn Rüdiger,Weyers Markus,Kneissl Michael

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4833246

Reference29 articles.

1. AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers

2. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

3. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

4. Advances in group III-nitride-based deep UV light-emitting diode technology

5. Unique optical properties of AlGaN alloys and related ultraviolet emitters

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep‐Ultraviolet Luminescence Properties of AlN;physica status solidi (RRL) – Rapid Research Letters;2024-03-17

2. High-Quality Film Bulk Acoustic Resonators Fabricated on AlN Films Grown by a New Two-Step Method;IEEE Electron Device Letters;2022-06

3. Stimulated emission mechanism of aluminum nitride;Physical Review B;2022-05-27

4. Impact of the positive electron–hole exchange interaction constant on the binding energy of neutral donor bound excitons in AlN;Japanese Journal of Applied Physics;2021-08-01

5. Origin of defect luminescence in ultraviolet emitting AlGaN diode structures;Applied Physics Letters;2021-05-17