Chemically induced Fermi level pinning effects of high-k dielectrics on graphene
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-21055-z.pdf
Reference35 articles.
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3. Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene. Science 321, 385–388 (2008).
4. Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010).
5. Li, S.-L., Miyazaki, H., Kumatani, A., Kanda, A. & Tsukagoshi, K. Low Operating Bias and Matched Input−Output Characteristics in Graphene Logic Inverters. Nano Lett. 10, 2357–2362 (2010).
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