Effects of substrate bias on the sputtering of high density (111)-nanotwinned Cu films on SiC chips

Abstract

AbstractThis article presents a study of the influence of the substrate bias on the microstructure, preferred orientation, and mechanical and electrical properties of nanotwinned Cu film. The formation of a nanotwinned structure and (111) surface orientation can be properly controlled by applied substrate bias. High density nanotwinned structures were introduced into Cu films sputtered on SiC substrates with over 90% of (111)-orientation at − 150 V. Densely packed Cu nanotwins were observed within the columnar grains stacked up on each other along the film growth direction, with an average twin spacing of 19.4 nm. The Cu films deposited on SiC substrate via bias sputtering had surface roughness of 8.6 to 15.8 nm. The resistivity of the copper nanotwinned films sputtered with various substrate biases varied. The optimal indentation, 2.3 GPa, was found in the nanotwinned Cu film sputtered with a bias voltage of − 150 V. The effects of Ar ion bombardment on microstructure, surface morphology and properties are further discussed.