Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-09413-9.pdf
Reference56 articles.
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4. Torrezan, A. C., Strachan, J. P., Medeiros-Ribeiro, G. & Williams, R. S. Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology 22, 485203 (2011).
5. Pickett, M. D. & Williams, R. S. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices. Nanotechnology 23, 215202 (2012).
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