Author:
Rocco Emma,Licata Olivia,Mahaboob Isra,Hogan Kasey,Tozier Sean,Meyers Vincent,McEwen Benjamin,Novak Steven,Mazumder Baishakhi,Reshchikov Michael,Douglas Bell L.,Shahedipour-Sandvik F.
Abstract
AbstractWe report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surrounding a hillock structure is comparable to that within hillock sidewall facets measured at 1.3 × 1019 cm−3 by atom probe tomography, and clustering of Mg atoms is seen in all regions of the film. Within individual hillock structures a decreased Mg cluster density is observed within hillock structures as opposed to the planar regions surrounding a hillock. Additionally, the Mg cluster radius is decreased within the hillock sidewall. The favorable incorporation of Mg is attributed to Mg dopants incorporating substitutionally for Ga during growth of semi-polar facets of the hillock structures. Enhanced p-type conductivity of GaN:Mg films grown on high hillock density template layers is verified by optical and electrical measurement.
Publisher
Springer Science and Business Media LLC
Cited by
18 articles.
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