Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth

Author:

Yoo Yang-Seok,Song Hyun Gyu,Jang Min-Ho,Lee Sang-Won,Cho Yong-Hoon

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference29 articles.

1. Kozawa, T. et al. Thermal stress in GaN epitaxial layers grown on sapphire substrates. Journal of applied physics 77, 4389–4392 (1995).

2. Zhu, D., Wallis, D. & Humphreys, C. Prospects of III-nitride optoelectronics grown on Si. Reports on Progress in Physics 76, 106501 (2013).

3. Bang, J., Sun, Y., Song, J.-H. & Zhang, S. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices. Scientific reports 6, 24404 (2016).

4. Baş, Y. et al. Defect research of InGaN based blue LED structures using reciprocal space mapping. Gazi University Journal of Science 28, 365–375 (2015).

5. Lefebvre, P. et al. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy. Applied Physics Letters 78, 1252–1254 (2001).

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