Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-19510-y.pdf
Reference21 articles.
1. Maassen, D. et al. 70W GaN-HEMT Ku-band power amplifier in MIC technology. IEEE Trans. Microw. Theory Techn. 65, 1272–1283 (2017).
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3. Ishida, H. et al. A High-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration. IEEE Trans. Electron Devices. 52, 1893–1899 (2005).
4. Nagy, W., Brown, J., Borges, R. & Singhal, S. Linearity characteristics of microwave-power GaN HEMTs. IEEE Trans. Microw. Theory Techn. 51, 660–664 (2003).
5. Islam, S. S. & Mehdi Anwar, A. F. Temperature-dependent nonlinearities in GaN/AlGaN HEMTs. IEEE Trans. Electron Devices. 49, 710–717 (2002).
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