Author:
Ballabio Andrea,Bietti Sergio,Scaccabarozzi Andrea,Esposito Luca,Vichi Stefano,Fedorov Alexey,Vinattieri Anna,Mannucci Cosimo,Biccari Francesco,Nemcsis Akos,Toth Lajos,Miglio Leo,Gurioli Massimo,Isella Giovanni,Sanguinetti Stefano
Abstract
AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.
Funder
H2020 Future and Emerging Technologies
European Regional Development Fund
Ministero dell’Istruzione, dell’Università e della Ricerca
Publisher
Springer Science and Business Media LLC
Cited by
14 articles.
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