Author:
Jia Ran,Zhao Dongfang,Gao Naikun,Liu Duo
Publisher
Springer Science and Business Media LLC
Reference46 articles.
1. Yu, H., Feng, X. D., Yi, C. & Charles, M. L. Gallium nitride nanowire nanodevices. Nano Lett. 2, 101–104 (2002).
2. Lester, S. D., Ponce, F. A., Craford, M. G. & Steigerwald, D. A. High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66, 1249–1251 (1995).
3. Justin, C. J. et al. Single gallium nitride nanowire lasers. Nature Mater. 1, 106–110 (2002).
4. Omkar, J., Ian, F., Christiana, H. & Sarah, K. Design and characterization of Ga N/InGaN solar cells. Appl. Phys. Lett. 91, 132117-1–132117-3 (2007).
5. Asif Khan, M. et al. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers. Appl. Phys. Lett. 60, 2917–2919 (1992).
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