Nanosheet-based complementary transistors with a 48 nm pitch
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://www.nature.com/articles/s41928-023-01090-z.pdf
Reference6 articles.
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3. Ritzenthaler, R. et al. In Proc. 2021 IEEE Int. Electron Devices Meeting 26.2.1–26.2.4 (IEEE, 2021); https://doi.org/10.1109/IEDM19574.2021.9720524
4. Schuddinck, P. et al. In Proc. 2022 IEEE Symp. VLSI Circuits Dig. Tech. 365–366 (IEEE, 2022); https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830492
5. Subramanian, S. et al. In Proc. 2020 IEEE Symp. VLSI Circuits Dig. Tech. TH3.1–3.2 (IEEE, 2022); https://doi.org/10.1109/VLSITechnology18217.2020.9265073
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