Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide-Reference-Cited by-同舟云学术

Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide

Published:2023-11-30 Issue:1 Volume:7 Page:29-38
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Yang Tilo H.^ORCID,Liang Bor-Wei,Hu Hsiang-Chi,Chen Fu-Xiang^ORCID,Ho Sheng-Zhu,Chang Wen-Hao,Yang Liu^ORCID,Lo Han-Chieh,Kuo Tzu-Hao^ORCID,Chen Jyun-Hong,Lin Po-Yen,Simbulan Kristan Bryan^ORCID,Luo Zhao-Feng,Chang Alice Chinghsuan,Kuo Yi-Hao,Ku Yu-Seng,Chen Yi-Cheng^ORCID,Huang You-Jia,Chang Yu-Chen,Chiang Yu-Fan,Lu Ting-Hua^ORCID,Lee Min-Hung^ORCID,Li Kai-Shin,Wu Menghao^ORCID,Chen Yi-Chun^ORCID,Lin Chun-Liang^ORCID,Lan Yann-Wen^ORCID

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.nature.com/articles/s41928-023-01073-0.pdf

Reference50 articles.

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3. Si, M. et al. A ferroelectric semiconductor field-effect transistor. Nat. Electron. 2, 580–586 (2019).