Real-time in situ optical tracking of oxygen vacancy migration in memristors-Reference-Cited by-同舟云学术

Real-time in situ optical tracking of oxygen vacancy migration in memristors

Published:2020-10-05 Issue:11 Volume:3 Page:687-693
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Di Martino Giuliana^ORCID,Demetriadou Angela,Li Weiwei,Kos Dean^ORCID,Zhu Bonan,Wang Xuejing,de Nijs Bart^ORCID,Wang Haiyan^ORCID,MacManus-Driscoll Judith^ORCID,Baumberg Jeremy J.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.nature.com/articles/s41928-020-00478-5.pdf

Reference43 articles.

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3. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007).

4. Bernard, Y., Renard, V. T., Gonon, P. & Jousseaume, V. Back-end-of-line compatible conductive bridging RAM based on Cu and SiO2. Microelectron. Eng. 88, 814–816 (2011).

5. Das, M., Kumar, A., Singh, R., Htay, M. T. & Mukherjee, S. Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering. Nanotechnology 29, 055203 (2018).

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