Probing memristive switching in nanoionic devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.nature.com/articles/s41928-018-0069-1.pdf
Reference136 articles.
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3. Prodromakis, T., Toumazou, C. & Chua, L. Two centuries of memristors. Nat. Mater. 11, 478–481 (2012).
4. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007).
5. Lee, M.-J. et al. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5–x/TaO2–x bilayer structures. Nat. Mater. 10, 625–630 (2011).
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