Direct fabrication of graphene on SiO2 enabled by thin film stress engineering-Reference-Cited by-同舟云学术

Direct fabrication of graphene on SiO2 enabled by thin film stress engineering

Published:2014-05-23 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

McNerny Daniel Q.,Viswanath B.,Copic Davor,Laye Fabrice R.,Prohoda Christophor,Brieland-Shoultz Anna C.,Polsen Erik S.,Dee Nicholas T.,Veerasamy Vijayen S.,Hart A. John

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep05049.pdf

Reference44 articles.

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2. Kang, J., Shin, D., Bae, S. & Hong, B. H. Graphene transfer: Key for applications. Nanoscale 4, 5527–5537 (2012).

3. Regan, W. et al. A direct transfer of layer-area graphene. Appl. Phys. Lett. 96, 113102 (2010).

4. Pirkle, A. et al. The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 . Appl. Phys. Lett. 99, 122108 (2011).

5. Bae, S. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 5, 574–578 (2010).

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