Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep16123.pdf
Reference27 articles.
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2. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature. 432, 488–492 (2004).
3. Fortunato, E. et al. R. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature. Adv. Mater. 17, 590–594 (2005).
4. Yabuta, H. et al. H. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering. Appl. Phys. Lett. 89, 112123 (2006).
5. Meyers, S. et al. Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs. J. Am. Chem. Soc. 130, 17603–17609 (2008).
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1. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics;Advanced Functional Materials;2019-09-06
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