Gate-tunable topological valley transport in bilayer graphene-Reference-Cited by-同舟云学术

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Gate-tunable topological valley transport in bilayer graphene

Published:2015-09-28 Issue:12 Volume:11 Page:1027-1031
ISSN:1745-2473
Container-title:Nature Physics
language:en
Short-container-title:Nature Phys

Author:

Sui Mengqiao,Chen Guorui,Ma Liguo,Shan Wen-Yu,Tian Dai,Watanabe Kenji,Taniguchi Takashi,Jin Xiaofeng,Yao Wang,Xiao Di,Zhang Yuanbo

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://www.nature.com/articles/nphys3485.pdf

Reference36 articles.

1. Xu, X., Yao, W., Xiao, D. & Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nature Phys. 10, 343–350 (2014).

2. Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007).

3. Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS2 transistors. Science 344, 1489–1492 (2014).

4. Gorbachev, R. V. et al. Detecting topological currents in graphene superlattices. Science 346, 448–451 (2014).

5. Xiao, D., Liu, G.-B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).

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