Atomic View of Filament Growth in Electrochemical Memristive Elements-Reference-Cited by-同舟云学术

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Atomic View of Filament Growth in Electrochemical Memristive Elements

Published:2015-08-21 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Lv Hangbing,Xu Xiaoxin,Sun Pengxiao,Liu Hongtao,Luo Qing,Liu Qi,Banerjee Writam,Sun Haitao,Long Shibing,Li Ling,Liu Ming

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep13311.pdf

Reference40 articles.

1. Yang, J. J., Strukov, D. B. & Stewart, D. R. Memristive devices for computing. Nat. Nanotechnol. 8, 13–24 (2013).

2. Wang, P. et al. A Semi-floating gate transistor for low-voltage ultrafast memory and sensing operation. Science 341, 640–643 (2013).

3. Borghetti, J. et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication. Nature 464, 873–876 (2010).

4. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80–83 (2008).

5. Yang, J. J. et al. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol 3, 429–433 (2008).

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