A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation

Abstract

Faster at the Gate Advanced designs will be needed to continue to improve the performance of the main components of high-speed computing, metal-oxide semiconductor field-effect transistors (MOSFETs) and floating-gate (FG) MOSFETs. Wang et al. (p. 640) fabricated a semi-floating gate (SFG) transistor in which a tunneling field-effect transistor couples the positively doped floating gate to the negatively doped drain region. The charge stored on the SFG was used to shift the voltage threshold for switching the transistor, which in turn sped up its operation and lowered the power consumed. These devices were used for ultrahigh-speed memory and in light sensing and imaging.