Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://www.nature.com/articles/s41377-018-0016-y.pdf
Reference32 articles.
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3. Holt, D. B. & Yacobi, B. G. Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures. (Cambridge Univ. Press: 2007).
4. Suzuki, T. & Matsumoto, Y. Effects of dislocations on photoluminescent properties in liquid phase epitaxial GaP. Appl. Phys. Lett. 26, 431–433 (1975).
5. Gfroerer, T. H., Zhang, Y. & Wanlass, M. W. An extended defect as a sensor for free carrier diffusion in a semiconductor. Appl. Phys. Lett. 102, 012114 (2013).
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