High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep23039.pdf
Reference25 articles.
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3. Kim, S. J. et al. Review of solution-processed oxide thin-film transistors. Jpn. J. Appl. Phys. 53, 02BA02 (2014).
4. Nag, M. et al. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch stop-layer. J. Inf. Disp. 22, 23–28 (2014)
5. Ahn, B. D. et al. A novel amorphous InGaZnO thin film transistor structure without source /drain layer deposition. Jpn. J. Appl. Phys. 48, 03B019 (2009).
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