Author:
Kim Keun Su,Walter Andrew L.,Moreschini Luca,Seyller Thomas,Horn Karsten,Rotenberg Eli,Bostwick Aaron
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference30 articles.
1. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nature Mater. 6, 183–191 (2007).
2. Novoselov, K. S. et al. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene. Nature Phys. 2, 177–180 (2006).
3. McCann, E. & Fal’ko, V. I. Landau-level degeneracy and quantum Hall effect in a graphite bilayer. Phys. Rev. B 96, 086805 (2006).
4. Ohta, T., Bostwick, A., Seyller, T., Horn, K. & Rotenberg, E. Controlling the electronic structure of bilayer graphene. Science 313, 951–954 (2006).
5. Oostinga, J. B., Heersche, H., B., Liu, X., Morpurgo, A. F. & Vandersypen, L. M. K. Gate induced insulating state in bilayer graphene devices. Nature Mater. 7, 151–156 (2008).
Cited by
154 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献