Disordered RuO2 exhibits two dimensional, low-mobility transport and a metal–insulator transition
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep21836.pdf
Reference55 articles.
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2. Kravchenko, S. V., Kravchenko, G. V., Furneaux, J. E., Pudalov, V. M. & D’Iorio, M. Possible metal–insulator transition at B = 0 in 2 dimensions. Phys. Rev. B 50, 8039–8042 (1994).
3. Hanein, Y. et al. The metallic like conductivity of a two-dimensional hole system. Phys. Rev. Lett. 80, 1288–1291 (1998).
4. Yoon, Y., Li, C. C., Shahar, D., Tsui, D. C. & Shayegan, M. Wigner crystallization and metal–insulator transition of two-dimensional holes in GaAs at B=0. Phys. Rev. Lett. 82, 1744–1747 (1999).
5. Simmons, M. Y. et al. Weak localization, hole–hole interactions and the “metal”–insulator transition in two dimensions. Phys. Rev. Lett. 84, 2489–2492 (2001).
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