Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature-Reference-Cited by-同舟云学术

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Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

Published:2016-09-12 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Makihara Katsunori,Kato Takeshi,Kabeya Yuuki,Mitsuyuki Yusuke,Ohta Akio,Oshima Daiki,Iwata Satoshi,Darma Yudi,Ikeda Mitsuhisa,Miyazaki Seiichi

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep33409.pdf

Reference42 articles.

1. Datta, S. & Das, B. Electronic analog of the electro-optic modulator. Appl. Phys. Lett. 56, 665–667 (1990).

2. Monsma, D. J., Lodder, J. C., Popma, Th. J. A. & Dieny, B. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor. Phys. Rev. Lett. 74, 5260–5263 (1995).

3. Zutic, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).

4. Sugahara, S. & Tanaka, M. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84, 2307–2309 (2004).

5. Crooker, S. et al. Imaging spin transport in lateral ferromagnet/semiconductor structures. Science 309, 2191–2195 (2005).

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